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The BSM50GB120DLCHOSA1 is a dual IGBT module manufactured by Infineon Technologies, designed for high-power switching applications. It features a collector-emitter maximum voltage (VCEO) of 1200 V and a continuous collector current (IC) of 50 A at 25°C. The device utilizes EconoPACK™ 3 packaging with screw mount installation. Key electrical parameters include a collector-emitter saturation voltage of 2.5 V, a gate-emitter leakage current of 300 nA, and a power dissipation (Pd) of 360 W. The operational temperature range spans from -40°C to +125°C, with a maximum gate-emitter voltage of 20 V.
Verify the specific suffix HOSA1 against official datasheets to confirm exact manufacturing lot details and compliance status. Confirm availability as this component may be subject to end-of-life restrictions or limited supply conditions depending on the production date code.
Select this module for designs requiring a 1200 V rating with 50 A continuous current handling. Ensure the cooling solution supports the 360 W dissipation limit within the specified operating temperature range. Verify that the PCB layout accommodates the EconoPACK™ 3 footprint and screw mounting requirements.
This part belongs to Infineon's EconoPACK™ 3 series, which integrates TrenchStop™ technology for improved switching characteristics. The BSM50GB120DLC variant serves as the base model for this dual IGBT configuration, widely used in standard industrial power conversion topologies.
Direct substitutes include the BSM50GP120 and BSM50GB120DN2. Verify pin compatibility and thermal resistance values before substitution.