SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BSM50GB120DN2HOSA1 is a dual IGBT power module manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 1200 V and a continuous collector current capacity of 50 A. The device utilizes the TrenchStop technology for optimized switching performance. It is housed in a flange-mount package with seven terminals, designed for isolated mounting. The maximum operating junction temperature is specified at 150 °C, with an absolute maximum power dissipation rating of 400 W.
Verify the specific suffix HOSA1 against official Infineon documentation to confirm exact manufacturing lot or revision details. Confirm availability status as distribution channels may list this component as end-of-life or limited supply. Ensure compatibility with existing heatsinking infrastructure due to the flange-mount form factor.
Select this module for applications requiring robust 1200 V blocking capability and moderate current handling up to 50 A. Consider the thermal resistance characteristics when designing the cooling system to maintain junction temperatures within the 150 °C limit. Verify gate drive requirements align with standard IGBT control voltages.
This component belongs to the BSM series of IGBT modules from Infineon. These modules are widely used in medium-power industrial applications. The DN2 suffix typically denotes a specific pinout or packaging variant within the broader product family. The HOSA1 suffix indicates a specific customer or regional specification.
Direct replacements include other 1200V 50A dual IGBT modules from the same manufacturer series, such as the BSM50GB120DLC, provided pinouts and thermal characteristics match. Cross-vendor substitutes require careful verification of electrical parameters and mechanical dimensions.