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The BSM50GD120DLCBOSA1 is a three-phase full-bridge IGBT power module manufactured by Infineon Technologies. It features a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C case temperature. The device utilizes EconoPIM3 packaging with screw mount installation. Key electrical parameters include a maximum power dissipation of 360 W, a collector-emitter saturation voltage of 2.5 V, and a gate-emitter leakage current of 300 nA. The operating junction temperature range spans from -40°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices prior to procurement. Ensure supply chain stability as availability may be restricted.
Select this module for applications requiring a robust three-phase inverter solution with high voltage tolerance. Evaluate thermal resistance requirements against the specified power dissipation limits. Verify that the system cooling infrastructure supports the EconoPIM3 form factor and mounting specifications.
This component belongs to the BSM series of IGBT modules, designed for medium-power industrial applications. It represents a standard offering in Infineon's portfolio for three-phase rectification and inversion tasks, balancing performance with cost-efficiency in the 1200V class.
Direct substitutes include BSM50GP120 and BSM50GD120DN2. Verify pinout compatibility and thermal characteristics before substitution.