BSM50GD120DN2E3226BOSA1

BSM50GD120DN2E3226BOSA1

  • Description:IGBT MOD 1200V 50A 350W
  • Series:-

SKU:f84c59da329d Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 50A 350W
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • IGBT Type:-
  • Configuration:Three Phase Inverter
  • Vce(on) (Max) @ Vge, Ic:3V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):50 A
  • Power - Max:350 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:3.3 nF @ 25 V

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BSM50GD120DN2E3226BOSA1

Overview

The BSM50GD120DN2E3226BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoPACK 2 series. It features a full bridge configuration with six elements and built-in diodes. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a power dissipation rating of 280 W. The module operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.

Feature Summary

  • Full bridge configuration integrating six IGBT elements with built-in freewheeling diodes for three-phase applications.
  • Utilizes EconoPACK 2 packaging designed for efficient thermal management and compact integration.
  • Features screw mount installation style suitable for robust mechanical securing.

Applications

  • Industrial motor drives
  • Uninterruptible power supplies (UPS)
  • Induction heating systems

Procurement Notes

Verify the specific suffix BOSA1 against official Infineon documentation to confirm exact revision status. Check for End-of-Life notifications or discontinuance alerts prior to procurement. Confirm RoHS compliance details through the manufacturer's official datasheet rather than distributor summaries.

Selection Notes

Select this component for designs requiring a 1200V rated three-phase bridge with 50A continuous current capability. Ensure the system cooling solution can handle the specified 280W power dissipation. Verify that the operating environment stays within the -40°C to +150°C junction temperature limits defined in the technical specifications.

Part Context

This part belongs to the BSM50GD120 series of IGBT modules from Infineon. It shares the core electrical characteristics with variants like BSM50GD120DN2 but may differ in packaging or ordering suffixes. The EconoPACK 2 form factor is standard for medium-power industrial applications.

Replacement Considerations

BSM50GD120DN2 is a confirmed substitute part number listed in public databases as an alias or predecessor variant. Verify pinout compatibility and thermal resistance values before substitution.

BSM50GD120DN2E3226BOSA1BSM50GD120DN2E3226BOSA1

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