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The BSM50GD120DN2E3226BOSA1 is a silicon IGBT module manufactured by Infineon Technologies, belonging to the EconoPACK 2 series. It features a full bridge configuration with six elements and built-in diodes. The device supports a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.7 V and a power dissipation rating of 280 W. The module operates within a junction temperature range of -40°C to +150°C and utilizes screw mount installation.
Verify the specific suffix BOSA1 against official Infineon documentation to confirm exact revision status. Check for End-of-Life notifications or discontinuance alerts prior to procurement. Confirm RoHS compliance details through the manufacturer's official datasheet rather than distributor summaries.
Select this component for designs requiring a 1200V rated three-phase bridge with 50A continuous current capability. Ensure the system cooling solution can handle the specified 280W power dissipation. Verify that the operating environment stays within the -40°C to +150°C junction temperature limits defined in the technical specifications.
This part belongs to the BSM50GD120 series of IGBT modules from Infineon. It shares the core electrical characteristics with variants like BSM50GD120DN2 but may differ in packaging or ordering suffixes. The EconoPACK 2 form factor is standard for medium-power industrial applications.
BSM50GD120DN2 is a confirmed substitute part number listed in public databases as an alias or predecessor variant. Verify pinout compatibility and thermal resistance values before substitution.