BSN20,215

$0.33

Description：MOSFET N-CH 50V 173MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:670c01989bac Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSN20,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 50V 173MA TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSN20,215

Description：MOSFET N-CH 50V 173MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：173mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：25 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：830mW (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSN20,215

BSN20,215

Single FETs, MOSFETs Overview

The BSN20,215 is an N-channel enhancement mode field-effect transistor manufactured by Nexperia USA Inc. It utilizes TrenchMOS technology and is housed in a SOT23 (TO-236AB) plastic surface-mount package. The device features a drain-source voltage rating of 50 V and a continuous drain current of 173 mA at 25 °C. Key electrical parameters include a maximum on-state resistance of 15 Ω at VGS=10V and 20 Ω at VGS=5V. Total power dissipation is rated at 0.83 W, with a junction temperature range from -65 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes TrenchMOS technology for very fast switching performance.
Logic level compatible operation suitable for direct interface with standard logic circuits.
Subminiature SOT23 surface mount package design.

Single FETs, MOSFETs Applications

Relay driver
High speed line driver
Logic level translator

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. The '215' suffix indicates a reel-based supply format. Confirm that the component meets all required thermal and electrical specifications for the intended operating environment before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low-voltage N-channel switching with logic-level compatibility. Ensure the design accounts for the specified on-state resistance limits under expected gate drive voltages. Verify thermal management requirements align with the provided junction-to-solder point and junction-to-ambient thermal resistance values.

Single FETs, MOSFETs Part Context

This part belongs to the Nexperia portfolio of single N-channel MOSFETs utilizing TrenchMOS technology. It serves as a compact solution for general-purpose switching tasks where small form factor and fast response times are prioritized. The device represents a transition from older VDMOS technologies to more efficient trench structures.