BSN254,126

Description：MOSFET N-CH 250V 310MA TO92-3
Series：-
Mfr：NXP USA Inc.
Package：Tape & Box (TB)

SKU:266e5d3e7ca7 Category: Single FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

BSN254,126 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 250V 310MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSN254,126

Description：MOSFET N-CH 250V 310MA TO92-3
Series：-
Mfr：NXP USA Inc.
Package：Tape & Box (TB)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.4V, 10V
Rds On (Max) @ Id, Vgs：5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-92-3
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Single FETs, MOSFETs datasheet and documents for BSN254,126

BSN254,126

Single FETs, MOSFETs Overview

The BSN254,126 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP USA Inc. It operates within a SOT54 (TO-92) variant package and supports a maximum drain-source voltage of 250 V and a continuous drain current of 310 mA. The device features a low on-state resistance of 5 Ω at 300 mA and includes direct interface compatibility with C-MOS and TTL logic. Thermal performance is defined by a junction-to-ambient thermal resistance of 125 K/W.

Single FETs, MOSFETs Feature Summary

Direct interface capability to C-MOS and TTL logic families
High-speed switching performance without secondary breakdown
Low drain-source on-state resistance for efficient conduction

Single FETs, MOSFETs Applications

Line current interruptor in telephone sets
Relay drivers
High-speed transformer drivers
Line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to confirm pinning variants and packaging details. Ensure that application conditions remain within the absolute maximum ratings provided in the datasheet to prevent permanent damage. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation up to 250 V is required in a compact through-hole package. Evaluate the thermal resistance characteristics against the expected power dissipation levels in the target circuit design. Consider the transfer admittance and capacitance values for high-frequency switching applications requiring fast response times.

Single FETs, MOSFETs Part Context

This device belongs to the discrete semiconductor category, specifically functioning as an N-channel enhancement mode vertical D-MOS transistor. It is designed for general-purpose switching applications where robust voltage handling and reliable operation are necessary. The product specification supersedes earlier data from June 1997.

Single FETs, MOSFETs Replacement Considerations

Consult the official datasheet for available pinning variants. Verify functional equivalence regarding voltage ratings and package dimensions before substituting with other N-channel MOSFETs.