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BSN304,126 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is MOSFET N-CH 300V 300MA TO92-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSN304,126
- Description：MOSFET N-CH 300V 300MA TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：300 V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.4V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 250mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：120 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-92-3
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Single FETs, MOSFETs datasheet and documents for BSN304,126
Single FETs, MOSFETs Overview
The BSN304,126 is an N-channel enhancement mode vertical D-MOS transistor manufactured by NXP USA Inc. It operates with a drain-source voltage of up to 300 V and a continuous drain current of 300 mA. The device features a low on-state resistance of 6 Ω at 250 mA and 10 V gate drive. It supports a peak drain current of 1.2 A and dissipates up to 1 W of power at 25 °C ambient temperature. The component utilizes a TO-92 (SOT54) package with three leads: gate, drain, and source.
Single FETs, MOSFETs Feature Summary
- Direct interface compatibility with CMOS and TTL logic families
- High-speed switching capability without secondary breakdown
- Vertical D-MOS construction for robust performance
Single FETs, MOSFETs Applications
- Line current interruptor in telephone sets
- Relay drivers
- High-speed transformer drivers
- Line transformer drivers
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix '126' against the manufacturer's latest documentation to confirm packaging details. Ensure the procurement channel provides valid traceability for this discrete semiconductor component. Confirm that the received parts match the SOT54 variant specifications outlined in the official product specification.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage isolation and direct logic interfacing. The 300 V rating suits line-driven circuits, while the TO-92 package facilitates through-hole mounting. Evaluate thermal constraints carefully, as power dissipation is limited to 1 W at 25 °C ambient conditions without additional heatsinking measures.
Single FETs, MOSFETs Part Context
This part belongs to the family of N-channel enhancement mode vertical D-MOS transistors produced by Philips Semiconductors, now NXP. It serves as a discrete switching element designed for moderate power applications where high voltage handling and fast switching are required within a standard through-hole package format.
Single FETs, MOSFETs Replacement Considerations
Consult the official datasheet for pin-compatible alternatives or updated series replacements. Verify electrical parameters such as breakdown voltage and on-resistance when considering substitutes from other manufacturers.
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