BSO040N03MSGXUMA1

Single FETs, MOSFETs Overview

The BSO040N03MSGXUMA1 is a single N-channel MOSFET from the OptiMOS 3M series, manufactured by Infineon Technologies. It features a 30 V drain-source breakdown voltage and a continuous drain current of 20 A. The device utilizes silicon technology in a DSO-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 3.9 mΩ at 10 V gate drive, a gate charge of 55 nC, and a threshold voltage of 2 V. It operates within a temperature range of -55 °C to +150 °C with a power dissipation rating of 2.5 W.

Single FETs, MOSFETs Feature Summary

• Integrates high-performance silicon MOSFET technology optimized for low conduction losses
• Provides robust thermal management capabilities suitable for demanding operating environments
• Features enhanced switching characteristics to support efficient power conversion applications

Single FETs, MOSFETs Applications

• General purpose power supply circuits
• Low-voltage DC-DC converter stages
• Load switching applications in consumer electronics

Single FETs, MOSFETs Procurement Notes

Verify the complete ordering part number against official Infineon documentation to ensure correct suffix alignment. Confirm that the specific batch matches the required RoHS compliance status. Check for any end-of-life notifications or obsolescence warnings prior to finalizing procurement plans. Ensure storage conditions adhere to moisture sensitivity level requirements specified in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when a compact single-channel solution is required for low-voltage applications. The DSO-8 package offers a balance between current handling capacity and board space constraints. Consider the 3.9 mΩ on-resistance for efficiency calculations in moderate current scenarios. Evaluate the 20 A continuous current rating against peak load requirements to ensure adequate safety margins.

Single FETs, MOSFETs Part Context

This device belongs to the OptiMOS 3M family, which represents Infineon's advanced planar MOSFET technology. The family is designed to deliver superior performance in terms of on-resistance and switching speed compared to previous generations. These components are widely used in various power management ICs and discrete power stages requiring reliable operation in small form factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon cross-reference guides for verified alternatives. Ensure any substitute maintains compatible pinout, voltage ratings, and package dimensions. Verify that replacement parts meet the same thermal and electrical specifications required by the original design.