BSO080P03NS3EGXUMA1

$0.78

Description：MOSFET P-CH 30V 12A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b9ce2e649a5a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO080P03NS3EGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 12A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO080P03NS3EGXUMA1

Description：MOSFET P-CH 30V 12A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：8mOhm @ 14.8A, 10V
Vgs(th) (Max) @ Id：3.1V @ 150µA
Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：6750 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.6W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO080P03NS3EGXUMA1

BSO080P03NS3EGXUMA1

Single FETs, MOSFETs Overview

The BSO080P03NS3EGXUMA1 is a single-channel P-Channel Power MOSFET from Infineon's OptiMOS 3P3 family. It features a -30V drain-source voltage rating and a continuous drain current of -14.8A at 25°C. The device exhibits a maximum on-resistance of 8.1mΩ at Vgs=-10V. Key electrical parameters include a gate charge of 61nC, a threshold voltage of 2.5V, and a power dissipation capacity of 2.5W. It operates within a temperature range of -55°C to +150°C and utilizes an SOIC-8 surface-mount package.

Single FETs, MOSFETs Feature Summary

OptiMOS 3P3 technology provides optimized performance for high-side switching applications.
Low on-resistance minimizes conduction losses in power circuits.
Enhancement mode operation ensures reliable switching control.

Single FETs, MOSFETs Applications

High-side load switching
Power management systems
Motor control interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'GXUMA1' against official Infineon documentation to confirm reel packaging specifications. Ensure compatibility with existing PCB footprints for the SOIC-8 package. Cross-reference thermal requirements with system constraints given the 2.5W dissipation limit. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a robust P-Channel solution with low on-resistance. The -30V rating suits standard 12V or 24V systems. Consider the 8.1mΩ Rds(on) for efficiency needs. The SOIC-8 package offers a compact footprint suitable for space-constrained designs. Evaluate thermal management capabilities relative to the specified power dissipation limits.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS 3P3 series, designed for efficient power switching. It represents Infineon's silicon-based discrete semiconductor solutions. The product line focuses on balancing low conduction losses with fast switching characteristics. It serves as a fundamental building block for modern electronic power distribution architectures.