BSO080P03SHXUMA1

Single FETs, MOSFETs Overview

The BSO080P03SHXUMA1 is a P-Channel enhancement-mode power MOSFET from the OptiMOS™-P family, manufactured by Infineon Technologies. It features a PG-DSO-8 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (VDS) of -30 V, a continuous drain current (ID) of -14.9 A at 25°C, and a maximum on-state resistance (RDS(on)) of 8 mΩ at VGS = -10 V. The device exhibits a typical gate charge (QG) of 102 nC and supports a pulsed drain current of -60 A.

Single FETs, MOSFETs Feature Summary

• Logic-level operation enabling direct drive from standard logic interfaces
• High thermal stability with an operating junction temperature up to 150°C
• Compliant with RoHS standards and halogen-free manufacturing requirements

Single FETs, MOSFETs Applications

• Low-side switching in DC motor control circuits
• Power management modules for automotive electronics
• General-purpose load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XUMA1 to confirm tape-and-reel packaging specifications. Ensure that the component meets all applicable JEDEC qualification standards required for the target application environment. Cross-reference the datasheet revision to confirm compatibility with existing design files.

Single FETs, MOSFETs Selection Notes

Select this component when a low RDS(on) value is critical for minimizing conduction losses in high-current paths. The logic-level threshold allows for efficient driving without additional level-shifting circuitry. Evaluate the thermal resistance characteristics against the available PCB copper area to ensure adequate heat dissipation under steady-state conditions.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS™-P series, which focuses on optimizing the trade-off between on-resistance and gate charge for P-channel devices. The technology utilizes advanced silicon processes to achieve high performance in compact surface-mount packages suitable for automated assembly.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the PG-DSO-8 footprint, -30 V rating, and comparable RDS(on). Verify pinout compatibility and thermal characteristics before implementation.

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-source voltage?

The absolute maximum rating for the gate-source voltage (VGS) is ±25 V.

How does the on-state resistance vary with temperature?

The drain-source on-state resistance increases as the junction temperature rises, following the positive temperature coefficient characteristic of silicon MOSFETs.