Single FETs, MOSFETs BSO083N03MSGXUMA1 product image

BSO083N03MSGXUMA1

$0.57
  • Description:MOSFET N-CH 30V 11A 8DSO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d0b1352ecaa1 Category: Brand:

  
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BSO083N03MSGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO083N03MSGXUMA1

  • Description:MOSFET N-CH 30V 11A 8DSO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.3mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.56W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-DSO-8
  • Package / Case:8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO083N03MSGXUMA1

BSO083N03MSGXUMA1

Single FETs, MOSFETs Overview

The BSO083N03MSGXUMA1 is an N-channel Power MOSFET from Infineon's OptiMOS series, housed in a PG-DSO-8 surface-mount package. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 8.3 mΩ at 14 A with a 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 27 nC at 10 V, an input capacitance (Ciss) of 2100 pF at 15 V, and a threshold voltage (Vgs(th)) of 2 V at 250 µA. It supports a junction temperature range from -55°C to +150°C with a power dissipation of 1.56 W.

Single FETs, MOSFETs Feature Summary

  • OptiMOS technology providing low conduction losses for efficient power switching
  • Enhanced thermal performance via the PG-DSO-8 surface-mount package design
  • Robust avalanche capability for handling inductive load transients

Single FETs, MOSFETs Applications

  • Low-side switching in automotive lighting circuits
  • DC-DC converter output stages
  • Motor control applications requiring high efficiency

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix XUMA1 to confirm reel packaging and ensure compatibility with automated assembly processes. Confirm RoHS compliance status through official documentation prior to integration. Check for any lifecycle notices regarding obsolescence or last-time buy dates to secure long-term supply continuity for production planning.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V rating and 11 A continuous current capacity are required in a compact DSO-8 footprint. The low Rds(on) makes it suitable for applications prioritizing conduction loss reduction. Ensure the gate drive voltage aligns with the specified 10 V condition for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS family, designed for general-purpose power switching. It utilizes silicon-based MOSFET technology optimized for cost-effective and reliable operation in various industrial and automotive environments. The PG-DSO-8 package provides a balance between thermal dissipation and board space efficiency.

Single FETs, MOSFETs Replacement Considerations

Consult official replacement lists for verified alternatives. Cross-reference pinouts and electrical characteristics carefully if substituting with other 30 V N-channel MOSFETs in similar packages.

BSO083N03MSGXUMA1BSO083N03MSGXUMA1
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