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BSO083N03MSGXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 11A 8DSO. Review the specifications below when checking this part for your BOM.
The BSO083N03MSGXUMA1 is an N-channel Power MOSFET from Infineon's OptiMOS series, housed in a PG-DSO-8 surface-mount package. It features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 11 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 8.3 mΩ at 14 A with a 10 V gate drive. Key electrical parameters include a gate charge (Qg) of 27 nC at 10 V, an input capacitance (Ciss) of 2100 pF at 15 V, and a threshold voltage (Vgs(th)) of 2 V at 250 µA. It supports a junction temperature range from -55°C to +150°C with a power dissipation of 1.56 W.
Verify the specific suffix XUMA1 to confirm reel packaging and ensure compatibility with automated assembly processes. Confirm RoHS compliance status through official documentation prior to integration. Check for any lifecycle notices regarding obsolescence or last-time buy dates to secure long-term supply continuity for production planning.
Select this component when a 30 V rating and 11 A continuous current capacity are required in a compact DSO-8 footprint. The low Rds(on) makes it suitable for applications prioritizing conduction loss reduction. Ensure the gate drive voltage aligns with the specified 10 V condition for optimal on-resistance performance.
This part belongs to Infineon's OptiMOS family, designed for general-purpose power switching. It utilizes silicon-based MOSFET technology optimized for cost-effective and reliable operation in various industrial and automotive environments. The PG-DSO-8 package provides a balance between thermal dissipation and board space efficiency.
Consult official replacement lists for verified alternatives. Cross-reference pinouts and electrical characteristics carefully if substituting with other 30 V N-channel MOSFETs in similar packages.
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