BSO150N03MDGXUMA1

Overview

The BSO150N03MDGXUMA1 is a dual N-channel OptiMOS™ 3 M-Series Power-MOSFET in a PG-DSO-8 package. It features a maximum drain-source voltage of 30 V and continuous drain current of 9.3 A at 25 °C. The device exhibits low on-resistance, with a maximum R DS(on) of 15 mΩ at V GS=10 V and 18.2 mΩ at V GS=4.5 V. Gate charge is typically 6.1 nC at 4.5 V and 12.6 nC at 10 V. Thermal resistance from junction to soldering point is 50 K/W. Operating temperature ranges from -55 °C to 150 °C.

Feature Summary

• Dual N-channel configuration optimized for 5V driver applications such as notebooks and VGA power supplies.
• Low figure of merit (FOM) combining gate charge and on-resistance for high-frequency switching performance.
• 100% avalanche tested for enhanced reliability under transient conditions.

Applications

• Notebook power systems
• VGA power regulation
• Point-of-load (POL) converters

Procurement Notes

Verify the component against the official Infineon datasheet revision 1.1 to confirm electrical parameters and package marking. Ensure the ordering suffix matches the required reel quantity specifications. Confirm RoHS compliance and halogen-free status according to IEC61249-2-21 standards before integration into consumer-grade designs.

Selection Notes

Select this component for designs requiring dual channels in a compact surface-mount footprint. The logic-level gate drive capability supports efficient operation with 4.5 V control signals. Evaluate thermal management requirements based on the specified junction-to-soldering point resistance for steady-state and pulsed operations.

Part Context

This part belongs to the OptiMOS™ 3 M-Series, designed specifically for consumer electronics applications. It utilizes silicon technology within a PG-DSO-8 plastic package. The series emphasizes low on-resistance and fast switching characteristics suitable for modern portable device power architectures.

Replacement Considerations

Check pinout compatibility and thermal resistance values when substituting. Verify that alternative dual N-channel MOSFETs meet the 30 V breakdown and 9.3 A current requirements. Ensure gate threshold voltage ranges align with the 5V driver system constraints.

FAQ

What is the maximum pulsed drain current?

The maximum pulsed drain current is 65 A at an ambient temperature of 25 °C.

Is the device qualified for automotive use?

No, the datasheet specifies that the BSO150N03MD G is qualified for consumer level applications only.

What is the typical reverse transfer capacitance?

The typical reverse transfer capacitance (Crss) is 2 pF at V DS=15 V and f=1 MHz.