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BSO200P03SHXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 7.4A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO200P03SHXUMA1
- Description：MOSFET P-CH 30V 7.4A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 9.1A, 10V
- Vgs(th) (Max) @ Id：1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：54 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2330 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.56W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO200P03SHXUMA1
Single FETs, MOSFETs Overview
The BSO200P03SHXUMA1 is a P-channel power MOSFET from Infineon's OptiMOS series, housed in an SO-8 surface-mount package. It features a drain-source voltage rating of -30 V and a continuous drain current of 9.1 A at 25°C. The device exhibits a typical gate charge of -40 nC at 10 V and a maximum on-resistance of 20 mΩ at 10 V. Thermal resistance is rated at 110 K/W, with an operating temperature range spanning from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- OptiMOS technology provides optimized performance for P-channel applications
- Integrated thermal protection mechanisms safeguard against overheating
- Designed for robust operation under high-voltage switching conditions
Single FETs, MOSFETs Applications
- High-side load switching in automotive systems
- Power distribution units requiring P-channel control
- Motor driver circuits utilizing low-side or high-side configurations
Single FETs, MOSFETs Procurement Notes
Verify the complete part number including the suffix HXUMA1 to ensure correct reel packaging and tape-and-reel format. Confirm that the SO-8 package variant matches your PCB footprint requirements. Check for RoHS compliance documentation if environmental regulations apply to your manufacturing process. Ensure static-sensitive handling procedures are followed during assembly.
Single FETs, MOSFETs Selection Notes
Select this component when a P-channel topology is required for high-side switching applications. The 20 mΩ on-resistance supports efficient power delivery for loads up to 9.1 A. Consider the -30 V rating for compatibility with standard 12 V automotive electrical systems. Evaluate thermal management needs based on the 110 K/W junction-to-ambient resistance value.
Single FETs, MOSFETs Part Context
This device belongs to Infineon's OptiMOS family, which focuses on improving efficiency and reliability in power switching applications. The BSO200P03S variant specifically targets P-channel requirements, offering alternatives to traditional N-channel solutions where high-side switching is necessary without level-shifting complexity.
Single FETs, MOSFETs Replacement Considerations
Consult official replacement guides for cross-reference options. Verify pinout compatibility and electrical parameter equivalence before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
