BSO203PNTMA1

Overview

The BSO203P is a P-Channel OptiMOS-P small-signal transistor in an SO-8 package. It features a drain-source voltage of -20 V and a continuous drain current of -8.2 A at 25°C. The device exhibits a maximum on-state resistance of 21 mΩ at VGS=-4.5 V. It supports Super Logic Level operation rated for 2.5 V gate drive. The component is avalanche rated with single-pulse energy up to 97 mJ and dv/dt rated at -6 kV/µs. Operating temperature ranges from -55°C to +150°C.

Feature Summary

• P-Channel enhancement mode construction
• Super Logic Level capability for low-voltage control
• Avalanche energy rated for robust switching
• High dv/dt rating for fast transient immunity

Applications

• Low-side power switching applications
• Load management circuits
• Motor driver interfaces
• Power supply output stages

Procurement Notes

Verify the specific ordering code Q67042-S4072 matches the required SO-8 package variant. Confirm that the preliminary data status does not impact long-term availability or final specification stability for your production timeline. Ensure thermal management designs account for the specified junction-to-soldering point thermal resistance values under actual PCB footprint conditions.

Selection Notes

Select this component when a P-Channel MOSFET with low gate threshold voltage is required for logic-level interfacing. The -20 V rating suits low-voltage DC systems. Consider the 21 mΩ RDS(on) for conduction loss calculations at high currents. Verify that the SO-8 package thermal dissipation capabilities meet the system's power requirements without excessive heatsinking.

Part Context

This part belongs to Infineon's OptiMOS-P family, designed for small-signal power switching. The technology emphasizes low on-resistance and fast switching speeds within a compact surface-mount package. It targets applications requiring efficient control of moderate current loads in consumer and industrial electronics where space and cost are critical constraints.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet. Cross-referencing requires independent verification of pinout, electrical ratings, and package dimensions against potential alternatives.

FAQ

What is the maximum gate-source voltage allowed?

The absolute maximum gate-source voltage is ±12 V.

Is the device suitable for avalanche operation?

Yes, the BSO203P is avalanche rated with a single pulse avalanche energy of 97 mJ under specified test conditions.

What is the reverse diode forward recovery time?

The reverse recovery time (trr) is typically 35.7 ns and maximally 44.6 ns under standard test conditions.