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BSO203SPNTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 9A 8DSO. Review the specifications below when checking this part for your BOM.
The BSO203SP is a P-Channel OptiMOS-P small-signal transistor in an SO-8 package. It features a drain-source breakdown voltage of -20 V and a continuous drain current of -9 A at 25°C, reducing to -7.2 A at 70°C. The device has a maximum on-state resistance of 21 mΩ at VGS=-4.5V and ID=-9A. It supports a pulsed drain current of -36 A and operates within a temperature range of -55°C to +150°C.
Verify the specific ordering code Q67042-S4009 against the manufacturer's official documentation to ensure compatibility with the required package and specifications. Confirm that the component meets all necessary environmental and safety standards for the intended deployment environment before finalizing procurement decisions.
Select this component when a low-voltage P-Channel MOSFET with Super Logic Level compatibility is required. Consider the thermal resistance characteristics and the derating curves for continuous drain current when designing for ambient temperatures above 25°C. Ensure the gate drive voltage aligns with the specified threshold and on-resistance conditions.
This component belongs to Infineon's OptiMOS-P family, designed for efficient power switching in automotive and industrial environments. The technology focuses on minimizing on-state resistance while maintaining robust performance under varying thermal conditions. It serves as a key element in power management solutions requiring reliable low-side switching capabilities.
Consult official replacement lists for verified substitutes. Cross-reference pinouts and electrical parameters carefully when considering alternative components from other manufacturers or different product lines within the same brand.
The maximum operating junction temperature is +150°C.
Yes, the BSO203SP is avalanche rated with a single pulse avalanche energy of 97 mJ under specified conditions.
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