BSO300N03S

$1.06

Description：MOSFET N-CH 30V 5.7A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2ca589cc23f6 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO300N03S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 5.7A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO300N03S

Description：MOSFET N-CH 30V 5.7A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：30mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id：2V @ 8µA
Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：600 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO300N03S

BSO300N03S

Single FETs, MOSFETs Overview

The BSO300N03S is a single N-channel power MOSFET manufactured by Infineon Technologies, utilizing Silicon Carbide (SiC) technology. It features a PG-TDSON-8 surface-mount package and operates with a drain-source voltage of 30 V. The device supports a continuous drain current of 300 A and achieves a typical on-resistance of 0.95 mΩ at a gate-source voltage of 10 V. Designed for high-efficiency switching applications, it integrates a built-in diode within the single FET configuration.

Single FETs, MOSFETs Feature Summary

Utilizes Silicon Carbide (SiC) semiconductor technology for enhanced performance
Integrates a built-in body diode within the single FET structure
Engineered for low on-resistance to minimize conduction losses
Optimized for fast switching speeds in power conversion circuits

Single FETs, MOSFETs Applications

High-current DC-DC converter modules
Automotive power distribution systems
Industrial motor drive inverters
On-board charger (OBC) topologies

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific lot traceability upon receipt. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering. Cross-reference ordering part numbers with official Infineon documentation to avoid substitution errors.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling capabilities within a compact surface-mount footprint. The low on-resistance characteristic makes it suitable for applications prioritizing thermal efficiency and reduced heat dissipation requirements. Evaluate gate charge parameters against driver capabilities to ensure optimal switching performance and minimize transition losses during operation.

Single FETs, MOSFETs Part Context

This SiC MOSFET belongs to Infineon's advanced power transistor portfolio, leveraging wide-bandgap material properties for superior electrical characteristics compared to traditional silicon devices. The PG-TDSON-8 package provides robust thermal management and mechanical stability for high-power density designs. It represents a specialized solution for demanding automotive and industrial environments where reliability and efficiency are critical.