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The BSO303PHXUMA1 is an OptiMOS-P small-signal transistor featuring a dual P-channel configuration in a PG-DSO-8 package. It operates with a drain-source voltage of -30 V and continuous drain current up to -8.2 A at 25 °C. The device exhibits a maximum on-state resistance of 21 mΩ at VGS=-4.5V. It supports logic level switching, handles pulsed currents of -32.8 A, and functions within a temperature range of -55 °C to 150 °C.
Verify the specific ordering suffix XUMA1 corresponds to the required tape-and-reel packaging format before finalizing procurement orders. Confirm that the component meets RoHS compliance standards and halogen-free requirements as specified by IEC61249-2-21 for your manufacturing environment. Ensure the PG-DSO-8 footprint matches your PCB design guidelines.
Select this component when a compact dual P-channel solution is required for low-voltage switching tasks. The 21 mΩ on-resistance at -4.5 V gate drive makes it suitable for logic-level interfacing without additional level shifters. Consider the -30 V rating and -8.2 A continuous current capacity against your peak load requirements and thermal dissipation constraints.
This part belongs to Infineon's OptiMOS-P family of small-signal transistors. These devices are engineered for high efficiency and reliability in automotive and industrial markets. The BSO303P specifically provides a matched pair of P-channel MOSFETs, simplifying circuit design for half-bridge or synchronous rectification topologies compared to using discrete single-channel components.
BSO203PHXUMA1