BSO303PHXUMA1

BSO303PHXUMA1

$1.39
  • Description:MOSFET 2P-CH 30V 7A 8DSO
  • Series:OptiMOS™

SKU:3a6e41b755c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2P-CH 30V 7A 8DSO
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:7A
  • Rds On (Max) @ Id, Vgs:21mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id:2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:2678pF @ 25V
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:PG-DSO-8
  • Grade:-
  • Qualification:-

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BSO303PHXUMA1

Overview

The BSO303PHXUMA1 is an OptiMOS-P small-signal transistor featuring a dual P-channel configuration in a PG-DSO-8 package. It operates with a drain-source voltage of -30 V and continuous drain current up to -8.2 A at 25 °C. The device exhibits a maximum on-state resistance of 21 mΩ at VGS=-4.5V. It supports logic level switching, handles pulsed currents of -32.8 A, and functions within a temperature range of -55 °C to 150 °C.

Feature Summary

  • Dual P-channel enhancement mode architecture integrated into a single surface-mount package
  • Logic level gate drive capability for direct interface with standard digital control circuits
  • Robust thermal performance supporting operation up to 150 °C junction temperature
  • Integrated reverse diode with defined forward characteristics and recovery parameters

Applications

  • Low-side switching in automotive power distribution modules
  • Motor control bridge configurations requiring complementary channel pairs
  • Industrial load switching applications with high surge current demands

Procurement Notes

Verify the specific ordering suffix XUMA1 corresponds to the required tape-and-reel packaging format before finalizing procurement orders. Confirm that the component meets RoHS compliance standards and halogen-free requirements as specified by IEC61249-2-21 for your manufacturing environment. Ensure the PG-DSO-8 footprint matches your PCB design guidelines.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage switching tasks. The 21 mΩ on-resistance at -4.5 V gate drive makes it suitable for logic-level interfacing without additional level shifters. Consider the -30 V rating and -8.2 A continuous current capacity against your peak load requirements and thermal dissipation constraints.

Part Context

This part belongs to Infineon's OptiMOS-P family of small-signal transistors. These devices are engineered for high efficiency and reliability in automotive and industrial markets. The BSO303P specifically provides a matched pair of P-channel MOSFETs, simplifying circuit design for half-bridge or synchronous rectification topologies compared to using discrete single-channel components.

Replacement Considerations

BSO203PHXUMA1

BSO303PHXUMA1BSO303PHXUMA1
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