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BSO303SPNTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 8.9A 8DSO. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSO303SPNTMA1
- Description：MOSFET P-CH 30V 8.9A 8DSO
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：21mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id：2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1754 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：2.35W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-DSO-8
- Package / Case：8-SOIC (0.154", 3.90mm Width)
Single FETs, MOSFETs datasheet and documents for BSO303SPNTMA1
Single FETs, MOSFETs Overview
The BSO303SPNTMA1 is a P-Channel OptiMOS-P small-signal transistor manufactured by Infineon Technologies. It features a -30 V drain-source breakdown voltage and an on-state resistance of 21 mΩ at VGS = -10 V. The device supports a continuous drain current of -8.9 A and a pulsed current of -35.6 A. It operates within a temperature range of -55°C to +150°C, includes avalanche rating capabilities with 97 mJ energy handling, and utilizes an SO-8 package.
Single FETs, MOSFETs Feature Summary
- Logic level compatible for direct microcontroller interfacing
- Avalanche rated for robust transient protection
- dv/dt rated for high-speed switching applications
Single FETs, MOSFETs Applications
- Low-side power switching in automotive systems
- Motor control circuits
- General purpose load switching
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated in the latest datasheet revision before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low on-resistance and logic-level gate drive compatibility. Evaluate thermal management requirements based on the specified junction-to-soldering point thermal resistance. Consider the avalanche energy rating when designing circuits subject to inductive load switching transients.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS-P family of P-channel MOSFETs designed for efficient power switching. The technology integrates optimized gate charge characteristics with low conduction losses. It serves as a discrete solution for replacing complex driver ICs in cost-sensitive power management designs.
Single FETs, MOSFETs Replacement Considerations
BSO303SP H
Single FETs, MOSFETs FAQ
What is the maximum single-pulse avalanche energy rating?
The device is rated for 97 mJ of avalanche energy under conditions of ID = -8.9 A, VDD = -25 V, and RGS = 25 Ω.
Is the BSO303SP suitable for logic-level driving?
Yes, it is explicitly described as Logic Level compatible, allowing operation with standard logic voltage levels.
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