BSO4822

$1.29

Description：MOSFET N-CH 30V 12.7A 8SO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2f3c3c584f01 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO4822 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 12.7A 8SO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO4822

Description：MOSFET N-CH 30V 12.7A 8SO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：12.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id：2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs：26.2 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1640 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO4822

BSO4822

Single FETs, MOSFETs Overview

The BSO4822 is an N-channel OptiMOS/Ge2 small-signal transistor in an SO-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 12.7 A at 25°C, dropping to 10.2 A at 70°C. The on-state resistance is 10 mΩ at 10 V gate drive and 14.4 mΩ at 4.5 V. Total gate charge is 26.2 nC. It supports avalanche energy of 165 mJ and reverse diode dv/dt ratings of 6 kV/µs. Power dissipation is 2.5 W at 25°C, with an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Logic-level enhancement mode operation for direct interface compatibility
Avalanche rated capability for robust transient handling
High dv/dt rating suitable for demanding fast switching applications

Single FETs, MOSFETs Applications

Fast switching power circuits
Industrial control systems
Consumer electronics power management

Single FETs, MOSFETs Procurement Notes

Verify the component against the official Infineon datasheet specifications before integration. Confirm that the SO-8 package marking matches '4822'. Ensure thermal design accommodates the specified junction-to-soldering point resistance. Validate that the application environment remains within the -55°C to +150°C operating limits.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high current density in a compact surface-mount footprint. The low on-resistance at logic levels makes it efficient for moderate voltage applications. Consider the thermal derating curves when determining heat dissipation requirements for continuous operation above ambient temperatures.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS family, utilizing Ge2 technology for optimized performance. It is designed as a small-signal transistor balancing conduction losses with switching speed. The product targets general-purpose power switching where size and efficiency are critical constraints.