BSO612CVGHUMA1

Overview

The BSO612CVGHUMA1 is a SIPMOS small-signal transistor featuring dual N- and P-channel enhancement mode MOSFETs in a PG-DSO-8 package. It supports a drain-source voltage of ±60 V with continuous drain currents of 3 A for the N-channel and -2 A for the P-channel. The device includes avalanche rating capabilities, Pb-free lead plating, and RoHS compliance. Maximum power dissipation is rated at 2 W per channel at 25 °C ambient temperature.

Feature Summary

• Dual N- and P-channel configuration within a single surface-mount package
• Enhancement mode operation with avalanche energy rating
• Pb-free lead plating and RoHS compliant construction

Applications

• General-purpose switching applications
• Small-signal power management circuits
• Automotive electronic modules requiring robust transient handling

Procurement Notes

Verify the component authenticity by checking the marking code '612CV' on the PG-DSO-8 package against official Infineon documentation. Confirm that the ordering suffix matches the specified tape-and-reel packaging format to ensure compatibility with automated assembly processes.

Selection Notes

Select this component when a compact solution requires both N-channel and P-channel switching capabilities in a single footprint. Ensure the application current does not exceed the continuous ratings of 3 A and -2 A respectively, and verify thermal management meets the 2 W dissipation limit at the intended operating temperature.

Part Context

This part belongs to Infineon's SIPMOS series, designed for small-signal applications. It integrates two distinct MOSFET types into one housing to save board space compared to using separate discrete components.

Replacement Considerations

No officially confirmed substitute part numbers are available in the provided documentation.