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BSP123E6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 370MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP123E6327T
- Description：MOSFET N-CH 100V 370MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：370mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.8V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 370mA, 10V
- Vgs(th) (Max) @ Id：1.8V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs：2.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：70 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.79W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP123E6327T
Single FETs, MOSFETs Overview
The BSP123E6327T is an N-channel enhancement mode logic-level MOSFET from Infineon Technologies, housed in a PG-SOT223 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 0.37 A at 25°C. The device exhibits a maximum on-state resistance of 6 Ω at VGS=10V and ID=0.37A. It supports a pulsed drain current of 1.48 A and includes a reverse diode rated for dv/dt up to 6 kV/μs. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- Enhancement mode N-Channel construction with logic level gate drive capability
- High dv/dt rating for the integrated reverse diode
- Qualified according to AEC-Q101 standards
Single FETs, MOSFETs Applications
- Low-side switching applications
- Power management circuits
- General purpose amplification
Single FETs, MOSFETs Procurement Notes
Verify the specific E6327 ordering suffix against official Infineon documentation to confirm tape and reel packaging details. Ensure component authenticity through authorized distribution channels. Confirm RoHS compliance status and lead-free plating specifications prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a compact SMD solution with high voltage tolerance. Consider the thermal resistance characteristics when determining PCB copper area requirements for adequate heat dissipation. Evaluate the gate threshold voltage range to ensure compatibility with the intended control logic levels.
Single FETs, MOSFETs Part Context
This part belongs to the BSP123 SIPMOS small-signal transistor series by Infineon Technologies. It utilizes standard silicon planar technology optimized for low on-resistance and fast switching speeds within a cost-effective surface-mount footprint suitable for consumer and industrial electronics.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Verify pinout compatibility and electrical parameter equivalence before substituting.
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