BSP125H6327XTSA1

Single FETs, MOSFETs Overview

The BSP125H6327XTSA1 is an N-Channel enhancement mode power MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223-4 package. It features a drain-source breakdown voltage of 600 V and a continuous drain current of 0.12 A at 25°C. The device exhibits a typical on-state resistance of 25 Ω at VGS=10V and a gate threshold voltage of 1.9 V. Key dynamic characteristics include a total gate charge of 4.4 nC and a reverse diode dv/dt rating of 6 kV/µs. It operates within a junction temperature range of -55°C to +150°C and meets AEC-Q101 automotive qualification standards.

Single FETs, MOSFETs Feature Summary

• High dv/dt capability rated at 6 kV/µs for robust switching performance
• Automotive grade reliability compliant with AEC-Q101 standards
• Logic level gate drive compatibility with low threshold voltage
• Halogen-free construction adhering to IEC61249-2-21 specifications

Single FETs, MOSFETs Applications

• Automotive electronic control units requiring high voltage isolation
• High-side switching applications in automotive environments
• Power management circuits utilizing logic-level gate drive signals
• Systems demanding robust transient voltage handling capabilities

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327 against official Infineon documentation to confirm packaging quantity and tape-and-reel specifications. Ensure the component meets RoHS compliance and halogen-free requirements as stated in the datasheet. Confirm that the PG-SOT223-4 footprint matches the target PCB design constraints before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability combined with low current handling in a compact surface-mount package. The logic-level gate drive simplifies interface design with standard microcontrollers. Consider the thermal resistance values when designing heat dissipation strategies for enclosed automotive enclosures or dense PCB layouts.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS family of power transistors, designed for general-purpose switching applications. The BSP125 variant specifically targets high-voltage scenarios within the SOT-223 form factor. It complements other devices in the lineup by offering enhanced dv/dt ratings suitable for demanding electrical environments found in modern vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference pinout configurations and thermal characteristics carefully when evaluating potential replacements to ensure functional equivalence in existing circuit designs.