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BSP125L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP125L6327HTSA1
- Description：MOSFET N-CH 600V 120MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id：2.3V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：6.6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP125L6327HTSA1
Single FETs, MOSFETs Overview
The BSP125L6327HTSA1 is a single N-channel MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage (Vds) of 600 V and a continuous drain current (Id) of 120 mA at 25°C. The device has a maximum on-resistance (Rds(on)) of 45 Ω at 10 V gate-source voltage. It operates with a gate-source voltage range of ±20 V and a threshold voltage (Vgs(th)) of 1.9 V. The component dissipates up to 1.8 W of power and functions within a temperature range of -55°C to +150°C junction temperature. It utilizes the SOT-223-4 package.
Single FETs, MOSFETs Feature Summary
- High-voltage capability suitable for robust switching applications
- Automotive-grade qualification ensuring reliability in demanding environments
- Compact surface-mount packaging for efficient board space utilization
Single FETs, MOSFETs Applications
- Automotive lighting control circuits
- General-purpose high-voltage switching
- Industrial signal processing interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix L6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and automotive grade status. Ensure compatibility with SOT-223-4 footprints during PCB design. Cross-reference datasheet revisions to validate electrical parameters before finalizing procurement specifications.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-channel switch is required in a compact form factor. The 600 V rating supports applications exceeding standard low-voltage limits. Consider the relatively high on-resistance for low-current switching tasks where conduction losses are less critical than voltage isolation capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the BSP125 series of single N-channel MOSFETs from Infineon Technologies. The series is designed for general-purpose switching applications requiring high voltage tolerance. The component integrates silicon technology optimized for automotive and industrial environments, providing a balance between voltage handling and physical footprint constraints.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings if considering alternative manufacturers.
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