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BSP135 E6906 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP135 E6906
- Description：MOSFET N-CH 600V 120MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id：1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：4.9 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP135 E6906
Single FETs, MOSFETs Overview
The BSP135 E6906 is a single N-channel depletion-mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SOT-223-4 surface-mount package. The device features a drain-source breakdown voltage of 600 V and a continuous drain current rating of 120 mA. Its on-resistance is specified at 30 Ohms, with a gate-source threshold voltage of 2.1 V and a total gate charge of 3.7 nC. The component supports a maximum power dissipation of 1.8 W and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Depletion-mode operation for normally-on functionality
- High-voltage capability suitable for robust switching applications
- Automotive-grade qualification ensuring reliability under demanding conditions
Single FETs, MOSFETs Applications
- Automotive lighting control circuits
- Industrial load switching
- Power management systems requiring high-voltage isolation
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure that the selected variant meets all required automotive qualification standards and environmental operating limits before finalizing procurement decisions.
Single FETs, MOSFETs Selection Notes
Select this component when a normally-on N-channel configuration is required for high-voltage applications. Consider the 600 V breakdown voltage and 1.8 W thermal dissipation capabilities relative to the circuit's peak load requirements and ambient operating temperatures.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's discrete semiconductor portfolio, specifically designed for general-purpose switching tasks. It serves as a specialized solution for applications necessitating high-voltage handling in a compact surface-mount footprint, distinct from standard enhancement-mode devices.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Do not assume functional equivalence with other N-channel MOSFETs due to the unique depletion-mode characteristics.
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