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BSP135H6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP135H6433XTMA1
- Description：MOSFET N-CH 600V 120MA SOT223
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：600 V
- Current - Continuous Drain (Id) @ 25°C：120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：45Ohm @ 120mA, 10V
- Vgs(th) (Max) @ Id：1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：4.9 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP135H6433XTMA1
Single FETs, MOSFETs Overview
The BSP135H6433XTMA1 is an N-channel depletion mode SIPMOS small-signal transistor in a PG-SOT223 package. It features a drain-source breakdown voltage of 600 V and a maximum on-state resistance of 60 W at VGS=0V. The device supports a continuous drain current of 0.12 A and a pulsed current of 0.48 A, with power dissipation rated at 1.8 W. Operating temperature ranges from -55 °C to 150 °C. Gate threshold voltage is sorted into bands J through N.
Single FETs, MOSFETs Feature Summary
- Depletion mode operation for constant current source applications
- High dv/dt rating of 6 kV/µs for robust switching performance
- Gate threshold voltage sorting available via reel indicator letters
Single FETs, MOSFETs Applications
- Switching mode power supplies (SMPS)
- Constant current sources
- Industrial control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific gate threshold voltage band required for the application by checking the reel label letter (J, K, L, M, or N). Confirm that the PG-SOT223 package dimensions and thermal characteristics align with the PCB layout constraints. Ensure the depletion mode behavior is compatible with the circuit design logic.
Single FETs, MOSFETs Selection Notes
Select this component when a normally-on N-channel MOSFET with high voltage capability is needed. The 600 V rating suits high-voltage low-current switching tasks. Consider the thermal resistance values for heat dissipation planning. Verify that the negative gate threshold voltage range fits the drive signal levels available in the system.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal transistor family. It utilizes advanced planar technology optimized for reliability. The PG-SOT223 package provides efficient thermal management for surface-mount assembly. The device is designed for industrial environments requiring wide operating temperature stability.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for other N-channel depletion mode MOSFETs with similar 600 V ratings and PG-SOT223 packaging. Verify matching electrical parameters such as RDS(on) and IDSS before substitution.
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