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BSP135L6906HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 600V 120MA SOT223-4. Review the specifications below when checking this part for your BOM.
The BSP135L6906HTSA1 is a single N-channel depletion mode silicon MOSFET manufactured by Infineon Technologies. It features a 600V drain-source breakdown voltage and a continuous drain current of 120mA. The device exhibits a maximum on-resistance of 45 ohms at a gate-source voltage of -10V. It operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 1.8W. The component is housed in a SOT-223 package.
Verify the specific ordering suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and automotive grade status. Ensure the part number matches the exact datasheet revision required for your design. Cross-reference the manufacturer's latest lifecycle status to confirm availability and production continuity before finalizing procurement plans.
Select this component when a normally-on high-voltage switch is required in space-constrained designs. The SOT-223 package provides adequate thermal performance for low-current applications. Verify that the circuit design accommodates the depletion mode characteristic, as the device conducts current when the gate-source voltage is zero.
This component belongs to the BSP135 series of high-voltage depletion mode MOSFETs from Infineon. These devices are specifically engineered for automotive and industrial environments requiring reliable high-side switching. The series offers robust performance in compact surface-mount packages, supporting various high-voltage control applications.
Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific depletion mode characteristics or automotive qualification requirements.
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