BSP149 E6327

Description：MOSFET N-CH 200V 660MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:d235e7191b13 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP149 E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP149 E6327

Description：MOSFET N-CH 200V 660MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel, Depletion Mode
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id：1V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：14 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP149 E6327

BSP149 E6327

Single FETs, MOSFETs Overview

The BSP149 E6327 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates with a drain-source breakdown voltage of 200 V and features a maximum on-state resistance of 3.5 Ω at zero gate bias. The device supports a continuous drain current of 0.66 A and includes dv/dt rating capabilities for high-speed switching applications. It is housed in a PG-SOT223 package and meets automotive qualification standards.

Single FETs, MOSFETs Feature Summary

Depletion mode operation enabling normally-on functionality without gate drive
dv/dt rated structure for robust performance in high-frequency switching environments
Automotive grade qualification compliant with AEC Q101 standards
Threshold voltage sorting available via reel indicators for precise design matching

Single FETs, MOSFETs Applications

High-frequency switching circuits requiring constant current sources
Compact power management designs utilizing normally-on topology
Automotive electronic systems demanding qualified discrete semiconductors

Single FETs, MOSFETs Procurement Notes

Verify the specific threshold voltage band required for your application, as the component is sorted into bands indicated on the reel label. Confirm that the PG-SOT223 package footprint aligns with your PCB layout constraints. Ensure the depletion mode characteristic suits your circuit's default state requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET is necessary for the circuit design. The low on-state resistance at zero gate bias makes it suitable for efficient constant current sourcing. Consider the thermal resistance characteristics and the need for dv/dt immunity if operating in harsh electrical environments or high-speed switching scenarios.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS series of small-signal transistors. The SIPMOS technology combines high efficiency with durability, offering a wide operating range. The BSP149 specifically targets applications benefiting from compact designs and high-frequency switching capabilities within the automotive and industrial sectors.