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BSP170PE6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP170PE6327
- Description：MOSFET P-CH 60V 1.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：410 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP170PE6327
Single FETs, MOSFETs Overview
The BSP170PE6327 is a P-channel enhancement-mode MOSFET manufactured by Infineon Technologies. It features a drain-source voltage rating of 60 V and a continuous drain current of 1.9 A at ambient temperature. The device has a maximum on-resistance of 260 mΩ and a gate-source voltage limit of 20 V. It operates within a temperature range of -55°C to +150°C with a power dissipation of 1.8 W. The component utilizes SOT-223 packaging and includes avalanche and dv/dt ratings.
Single FETs, MOSFETs Feature Summary
- P-channel enhancement mode operation
- Avalanche rated capability
- dv/dt rated performance
- RoHS compliant construction
Single FETs, MOSFETs Applications
- General purpose switching applications
- Low-side load switching
- Power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix PE6327 against official Infineon documentation to confirm package type and electrical characteristics. Ensure compliance with RoHS standards and AEC-Q101 qualification requirements if automotive application is intended. Confirm availability status as distribution data may indicate obsolete or limited stock conditions.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 60V P-channel MOSFET in an SOT-223 package. Consider the 1.9A current rating and 260mΩ on-resistance for efficiency requirements. Verify thermal management needs given the 1.8W power dissipation limit. Check for automotive qualification if used in vehicle electronics.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS series of single N-Channel and P-Channel MOSFETs. These devices are designed for general-purpose switching applications. The BSP170PE6327 variant specifically offers robust performance in surface-mount configurations suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-reference key parameters such as VDS, ID, RDS(on), and package dimensions when evaluating alternative components.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
