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BSP171PE6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 1.9A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP171PE6327T
- Description：MOSFET P-CH 60V 1.9A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：300mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id：2V @ 460µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：460 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP171PE6327T
Single FETs, MOSFETs Overview
The BSP171PE6327T is a P-Channel SIPMOS® small-signal transistor manufactured by Infineon Technologies. It operates in enhancement mode and features logic-level gate drive capability. The device is avalanche rated and dv/dt rated for robust performance. Key electrical parameters include a drain-source breakdown voltage of -60 V, a continuous drain current of -1.9 A at 25 °C, and a maximum on-state resistance of 0.3 Ω at VGS=-10 V. It utilizes the PG-SOT223 package.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for energy handling
- dv/dt rated for reverse diode switching
- Logic level gate drive compatibility
- Pb-free lead plating and RoHS compliant
Single FETs, MOSFETs Applications
- Power management circuits
- Motor control applications
- Load switching systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix PE6327 against official Infineon documentation to confirm packaging details and reel specifications. Ensure component authenticity through authorized distribution channels. Confirm that the part meets required automotive or industrial qualification standards if applicable to the design.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a P-Channel MOSFET with high breakdown voltage and logic-level interface. Consider the thermal resistance characteristics and power dissipation limits relative to the PCB footprint. Evaluate the avalanche energy rating if inductive load switching is present.
Single FETs, MOSFETs Part Context
This component belongs to the Infineon SIPMOS® family of small-signal transistors. These devices are designed for efficient switching in compact electronic designs. The technology supports high-frequency operation and offers reliable performance across a wide temperature range.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference lists for verified substitutes. Do not assume functional equivalence based solely on pinout or generic specifications without datasheet verification.
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