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BSP179H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 400V 210MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP179H6327XTSA1
- Description：MOSFET N-CH 400V 210MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：400 V
- Current - Continuous Drain (Id) @ 25°C：210mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：18Ohm @ 210mA, 10V
- Vgs(th) (Max) @ Id：1V @ 94µA
- Gate Charge (Qg) (Max) @ Vgs：6.8 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：135 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP179H6327XTSA1
Single FETs, MOSFETs Overview
The BSP179H6327XTSA1 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a PG-SOT223 package with four pins and operates within a temperature range of -55 °C to +150 °C. The device supports a maximum drain-source voltage of 400 V and continuous drain current of 0.21 A at 25 °C. It exhibits a maximum on-state resistance of 24 Ω at zero gate bias and includes reverse diode dv/dt rating capabilities. The component is qualified according to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Depletion mode operation for normally-on applications
- High dv/dt rated capability for fast switching environments
- AEC-Q101 automotive qualification ensuring reliability
- Threshold voltage sorting available via specific reel markings
Single FETs, MOSFETs Applications
- Automotive power management circuits
- High-voltage signal switching applications
- Normally-on load control systems
Single FETs, MOSFETs Procurement Notes
Verify the exact ordering suffix against official Infineon documentation to confirm packaging details and threshold voltage band availability. Ensure compatibility with PG-SOT223 footprints during design integration. Confirm RoHS compliance and halogen-free status requirements match project specifications before finalizing procurement orders.
Single FETs, MOSFETs Selection Notes
Select this component when a normally-on N-channel MOSFET with high voltage blocking capability is required. Consider the specific threshold voltage bands if precise turn-off characteristics are critical for the circuit design. Evaluate thermal performance based on the PCB footprint and cooling area constraints defined in the datasheet safe operating area curves.
Single FETs, MOSFETs Part Context
This part belongs to the SIPMOS series from Infineon, designed for robust small-signal power applications. The H6327 suffix indicates standard tape and reel packaging containing 1000 pieces per reel. It serves as a specialized discrete semiconductor solution for industrial and automotive sectors requiring reliable high-voltage switching.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. No direct public substitute part numbers are confirmed in the provided source material.
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