BSP220,115

Single FETs, MOSFETs Overview

The BSP220,115 is a P-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It is housed in a miniature SOT-223 surface-mount package designed for efficient heat transfer via an exposed drain pad. The device supports a maximum drain-source voltage of 200 V and a continuous DC drain current of 225 mA. Key electrical parameters include a maximum on-resistance of 12 Ω at a gate-source voltage of -10 V and a peak drain current capability of 600 mA. Total power dissipation reaches 1.5 W at 25 °C ambient temperature.

Single FETs, MOSFETs Feature Summary

• Vertical D-MOS technology provides low on-resistance and high-speed switching performance.
• Direct interface compatibility with standard logic families including CMOS and TTL.
• Elimination of secondary breakdown effects ensures robust operation under varying load conditions.

Single FETs, MOSFETs Applications

• Relay drivers
• High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the component matches the original Philips Semiconductors specification dated April 1995. Confirm the ordering suffix indicates the correct tape and reel packaging configuration. Ensure the manufacturer designation aligns with current Nexoria discrete semiconductor product lines before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage handling within a compact surface-mount footprint. Evaluate thermal resistance requirements against the specified junction-to-ambient value to ensure adequate heat dissipation. Verify that the logic family driving the gate falls within the specified threshold voltage range for reliable switching.

Single FETs, MOSFETs Part Context

This part belongs to the discrete semiconductor category, specifically field-effect transistors. It represents a legacy product originally developed by Philips Semiconductors, now maintained within the Nexperia portfolio. The SOT-223 package remains a standard choice for medium-power surface-mount applications requiring effective thermal management through the substrate.

Single FETs, MOSFETs Replacement Considerations

Consult official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic specifications without cross-referencing absolute maximum ratings and electrical characteristics.