BSP225,115

$0.68

Description：MOSFET P-CH 250V 225MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b397964aaa42 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSP225,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET P-CH 250V 225MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP225,115

Description：MOSFET P-CH 250V 225MA SOT223
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：225mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：90 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.5W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-223
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP225,115

BSP225,115

Single FETs, MOSFETs Overview

The BSP225,115 is a P-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia. It is housed in a miniature SOT223 surface-mount package designed for efficient heat transfer via the drain pad. The device features a maximum drain-source voltage of 250 V and a continuous DC drain current rating of 225 mA. Key electrical parameters include a maximum on-resistance of 15 Ω at a gate-source voltage of -10 V and a drain current of 200 mA. The component supports a total power dissipation of 1.5 W at 25 °C ambient temperature with a thermal resistance from junction to ambient of 83.3 K/W.

Single FETs, MOSFETs Feature Summary

Vertical D-MOS technology ensures low on-resistance and eliminates secondary breakdown risks.
Capable of direct interface with standard logic families such as C-MOS and TTL without additional level shifting components.
Engineered for high-speed switching applications with defined turn-on and turn-off time characteristics.

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required packaging configuration. Confirm the revision status of the datasheet against the specific production batch requirements. Ensure the procurement channel provides traceability documentation consistent with the original Philips Semiconductors specifications. Check for any RoHS or REACH compliance declarations relevant to the manufacturing date code.

Single FETs, MOSFETs Selection Notes

Select this component when a robust P-channel switch is required for moderate current loads up to 225 mA. The SOT223 package is suitable for applications where thermal management through the PCB copper area is feasible. Consider the 250 V breakdown voltage for higher voltage control applications. Evaluate the 15 Ω on-resistance against power loss constraints in the specific circuit design.

Single FETs, MOSFETs Part Context

Originally specified by Philips Semiconductors, this part is now managed under the Nexperia portfolio. The BSP225 belongs to the family of vertical D-MOS transistors designed for discrete switching tasks. It shares architectural similarities with other devices in the BSP series, offering a balance between voltage handling capability and switching speed in a compact surface-mount form factor.