BSP295H6327XTSA1

$0.86

Description：MOSFET N-CH 60V 1.8A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4fd075691f50 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP295H6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 1.8A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP295H6327XTSA1

Description：MOSFET N-CH 60V 1.8A SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：300mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：368 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP295H6327XTSA1

BSP295H6327XTSA1

Single FETs, MOSFETs Overview

The BSP295H6327XTSA1 is an N-channel enhancement-mode MOSFET from Infineon's SIPMOS series, housed in a PG-SOT223 surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 1.8 A at 25°C. The device exhibits a typical on-state resistance of 0.3 Ω and a total gate charge of 14 nC. It supports a reverse diode with a forward voltage of 0.84 V and a dv/dt rating of 6 kV/µs. Qualified to AEC-Q101 standards, it operates within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Enhancement mode operation for efficient switching control
High dv/dt capability for robust performance in fast-switching applications
Integrated body diode with specified reverse recovery characteristics
AEC-Q101 qualification for automotive reliability requirements

Single FETs, MOSFETs Applications

Automotive load switching circuits
Low-side power management modules
General-purpose high-speed switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging quantities and marking details. Ensure compatibility with RoHS and halogen-free compliance requirements as stated in the datasheet. Cross-reference the component marking code BSP295 with the physical device to prevent counterfeit substitution during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low gate charge is required for automotive or industrial environments. Consider the thermal resistance values and safe operating area curves for heat dissipation planning. Evaluate the reverse diode specifications if synchronous rectification or freewheeling functions are needed in the circuit design.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS small-signal transistor family, designed for compact surface-mount applications. The PG-SOT223 package provides a balance between power handling and board space efficiency. The BSP295 variant specifically targets low-voltage, medium-current switching tasks within the broader portfolio of automotive-grade silicon MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon replacement guides for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters such as RDS(on) and breakdown voltage against the original specification sheet.

Single FETs, MOSFETs FAQ

What is the maximum rated dv/dt for the reverse diode?

The maximum rated dv/dt is 6 kV/µs under conditions of IS=1.8A, VDS=40V, and di/dt=200A/µs.

How does the gate threshold voltage vary with temperature?

The gate threshold voltage typically decreases as junction temperature increases, ranging from approximately 1.8 V at low temperatures to lower values at elevated temperatures.