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BSP296E6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.1A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP296E6327
- Description：MOSFET N-CH 100V 1.1A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：364 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.79W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP296E6327
Single FETs, MOSFETs Overview
The BSP296E6327 is an N-channel enhancement mode logic level SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a 100 V drain-source voltage rating and a continuous drain current of 1 A at 42 °C, with a pulsed current capability of 4 A. The device operates within a junction temperature range of -55 °C to +150 °C and dissipates up to 1.8 W. Packaged in SOT-223, it exhibits a gate threshold voltage between 0.8 V and 2.0 V and a maximum on-state resistance of 0.8 Ω at VGS = 10 V.
Single FETs, MOSFETs Feature Summary
- Enhancement mode operation with logic-level gate threshold voltage for direct microcontroller interfacing
- High-voltage withstand capability suitable for low-side switching applications
- Robust thermal performance with defined safe operating area boundaries
Single FETs, MOSFETs Applications
- Low-side power switching circuits
- General-purpose amplifier stages
- DC motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67000-S067 E6327 against official Infineon documentation to confirm availability status. Ensure that the SOT-223 package dimensions align with the target PCB footprint requirements before finalizing component selection.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V breakdown voltage and 1 A continuous current are required in a compact surface-mount form factor. Consider the thermal resistance characteristics and the specific gate drive voltage levels necessary to achieve the specified on-resistance values during circuit design.
Single FETs, MOSFETs Part Context
This part belongs to the BSP296 series of SIPMOS transistors designed for small-signal applications. The E6327 suffix indicates a specific tape and reel packaging configuration intended for automated surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and electrical ratings carefully when evaluating potential replacements.
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