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BSP296L6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.1A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP296L6327HTSA1
- Description：MOSFET N-CH 100V 1.1A SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：17.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：364 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.79W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP296L6327HTSA1
Single FETs, MOSFETs Overview
The BSP296L6327HTSA1 is an N-channel enhancement mode logic level MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a 100 V drain-source voltage rating and a continuous drain current of 1 A at 42 °C. The device offers a maximum on-state resistance of 0.8 Ω at VGS = 10 V and 1 A. Gate threshold voltage ranges from 0.8 V to 2.0 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in a SOT-223 package.
Single FETs, MOSFETs Feature Summary
- Logic level gate drive capability with low threshold voltage for direct microcontroller interfacing
- High switching speed suitable for high-frequency applications
- Robust avalanche energy handling and safe operating area
Single FETs, MOSFETs Applications
- Load switching in automotive electronics
- Power management circuits
- Motor control interfaces
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code E6327 corresponds to the required tape and reel packaging configuration. Confirm that the component meets all relevant automotive qualification standards if deployed in vehicle systems. Ensure thermal design accounts for the specified power dissipation limits under actual operating conditions.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V N-channel MOSFET with logic-level compatibility is required. Consider the 0.8 Ω RDS(on) limit for conduction loss calculations. Evaluate the SOT-223 package thermal performance against the system's ambient temperature constraints and heat sinking capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the BSP296 series of small-signal transistors. It is designed as a general-purpose switch offering a balance between low on-resistance and fast switching times. The SIPMOS technology provides reliability for automotive and industrial environments.
Single FETs, MOSFETs Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with similar VDS (100 V), ID (1 A), and RDS(on) specifications. Verify pinout compatibility and package dimensions before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
