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BSP296NH6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.2A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP296NH6433XTMA1
- Description：MOSFET N-CH 100V 1.2A SOT223-4
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：152.7 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP296NH6433XTMA1
Single FETs, MOSFETs Overview
The BSP296NH6433XTMA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ series, rated for a drain-source voltage of 100 V and a continuous drain current of 1.2 A at 25 °C. It features a low on-state resistance of 371 mΩ at VGS=4.5 V and 329 mΩ at VGS=10 V. The device operates within a temperature range of -55 °C to 150 °C with a power dissipation of 1.8 W. It includes avalanche energy ratings and meets AEC-Q101 automotive qualification standards.
Single FETs, MOSFETs Feature Summary
- Logic level operation optimized for 4.5 V gate drive applications
- Avalanche rated capability for robust transient handling
- Automotive grade qualification compliant with AEC-Q101 standards
Single FETs, MOSFETs Applications
- Low-side switching in automotive electronic control units
- General purpose logic level power switching circuits
- Load switching applications requiring high reliability
Single FETs, MOSFETs Procurement Notes
Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the specific ordering suffix matches the required package and tape-and-reel specifications. Ensure compliance with RoHS and halogen-free requirements as stated in the datasheet before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component when a single N-channel MOSFET with 100 V breakdown and 1.2 A continuous current capacity is required. It is suitable for designs needing low gate charge and fast switching speeds in a PG-SOT223-4 package. Consider thermal management constraints based on the specified junction-to-ambient thermal resistance values.
Single FETs, MOSFETs Part Context
This part belongs to the BSP296N family of small-signal transistors manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount PG-SOT223 package. The component is designed for general-purpose switching applications where compact size and high efficiency are prioritized.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes include other N-channel MOSFETs with similar 100 V rating and SOT-223 packaging. Verify pinout compatibility and ensure equivalent RDS(on) and current handling capabilities before substitution.
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