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BSP296NL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.2A SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP296NL6327HTSA1
- Description：MOSFET N-CH 100V 1.2A SOT223-4
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：600mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：6.7 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：152.7 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP296NL6327HTSA1
Single FETs, MOSFETs Overview
The BSP296NL6327HTSA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, utilizing SIPMOS technology. It features a drain-source breakdown voltage of 100V and a continuous drain current of 1.2A at 25°C. The device exhibits a maximum on-resistance of 329 mOhms and a gate charge of 4.5 nC. Packaged in SOT-223-4, it supports a junction temperature range of -55°C to +150°C with a power dissipation of 1.8W. This component holds AEC-Q101 qualification for automotive reliability.
Single FETs, MOSFETs Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- SIPMOS technology optimized for high switching efficiency
- Robust thermal performance within a compact surface-mount package
Single FETs, MOSFETs Applications
- Automotive electronic control units
- Low-side switching applications
- General-purpose power management circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix L6327HTSA1 against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with standard SOT-223 footprints during PCB layout. Confirm current production status directly with the manufacturer or authorized distributors prior to finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 100V blocking capability with moderate current handling up to 1.2A. The low gate charge facilitates efficient driver interface design. Verify that the thermal requirements of the application align with the 1.8W power dissipation limit in the chosen SOT-223-4 configuration.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of small signal MOSFETs designed for robust performance in demanding environments. The series offers various voltage ratings and packages tailored for automotive and industrial sectors, emphasizing reliability and switching speed.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully when considering generic replacements.
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