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BSP299H6327XUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 400MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP299H6327XUSA1
- Description：MOSFET N-CH 500V 400MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：500 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP299H6327XUSA1
Single FETs, MOSFETs Overview
The BSP299H6327XUSA1 is an N-channel enhancement mode MOSFET from the Infineon SIPMOS series, housed in a surface-mount SOT-223 package with three active pins and a tab. It features a maximum drain-source voltage of 500 V and a continuous drain current of 0.4 A at 25 °C. The device has a maximum on-state resistance of 4 Ω and a gate threshold voltage range of 2.1 to 4.0 V. It supports a single-pulse avalanche energy of 130 mJ and operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robustness against inductive load switching events
- High-voltage capability suitable for demanding power control applications
- Qualified according to automotive reliability standards
Single FETs, MOSFETs Applications
- Automotive lighting systems
- Power management circuits
- General-purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix H6327XUSA1 matches the required tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as specified in the datasheet. Ensure the procurement channel provides valid traceability documentation for the AEC-Q101 qualification status.
Single FETs, MOSFETs Selection Notes
Select this component when high-voltage blocking capability is required alongside moderate current handling. The low gate threshold voltage facilitates efficient drive from standard logic levels. Consider the thermal resistance characteristics and the necessity for adequate copper area on the PCB drain connection to maintain safe operating temperatures under load.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS small-signal transistor family, designed for general-purpose switching. The SOT-223 package provides a balance between thermal performance and compact footprint. The device integrates a body diode with defined reverse recovery characteristics for use in bridge or freewheeling configurations.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 500 V rating, 0.4 A current capacity, and SOT-223 package. Verify pinout compatibility (Gate, Drain, Source) and ensure equivalent or superior avalanche energy ratings if used in inductive environments.
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