BSP299L6327HUSA1

Description：MOSFET N-CH 500V 400MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:bcc22c9ca636 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP299L6327HUSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 500V 400MA SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP299L6327HUSA1

Description：MOSFET N-CH 500V 400MA SOT223-4
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：500 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4Ohm @ 400mA, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：400 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4-21
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP299L6327HUSA1

BSP299L6327HUSA1

Single FETs, MOSFETs Overview

The BSP299L6327HUSA1 is an N-channel enhancement mode SIPMOS small-signal transistor in a SOT-223 package. It features a maximum drain-source voltage of 500 V and a continuous drain current of 0.4 A at 25 °C. The device has a typical on-state resistance of 3.1 Ω and a gate threshold voltage range of 2.1 to 4.0 V. It supports a pulsed drain current of 1.6 A, offers avalanche energy ratings up to 130 mJ, and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robustness against transient energy events
Enhancement mode operation with defined gate threshold voltage
Qualified according to automotive reliability standards

Single FETs, MOSFETs Applications

High-voltage switching circuits
Automotive electronic control modules
General-purpose power management applications

Single FETs, MOSFETs Procurement Notes

Verify the component marking matches BSP299 and confirm the package type is SOT-223. Ensure the ordering suffix L6327 corresponds to tape and reel packaging. Check that the device meets AEC-Q101 Class 1b requirements if used in automotive contexts. Confirm RoHS compliance and Pb-free lead plating status during acceptance testing.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with moderate current handling is required. The 500 V rating suits applications needing significant voltage isolation. Consider the 4 Ω on-resistance for efficiency calculations. Verify thermal dissipation capabilities align with the system's ambient temperature constraints and PCB copper area specifications.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's SIPMOS series of small-signal transistors. These devices are designed for surface-mount assembly using the SOT-223 form factor. The series provides a balance of voltage blocking capability and switching performance suitable for compact designs requiring reliable semiconductor switching elements.