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BSP316PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 680MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP316PL6327HTSA1
- Description：MOSFET P-CH 100V 680MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 680mA, 10V
- Vgs(th) (Max) @ Id：2V @ 170µA
- Gate Charge (Qg) (Max) @ Vgs：6.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：146 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP316PL6327HTSA1
Single FETs, MOSFETs Overview
Infineon BSP316PL6327HTSA1 is a P-Channel SIPMOS small-signal transistor in a P-SOT223-4-1 package. It features a -100 V drain-source breakdown voltage, -0.68 A continuous drain current, and 1.8 Ω maximum on-state resistance at -10 V gate drive. The device supports logic-level operation with a -1.5 V typical threshold voltage. It operates within a junction temperature range of -55°C to +150°C and includes an integrated reverse diode rated for -0.68 A continuous forward current.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode construction
- Logic level gate drive capability
- High dv/dt rating for the reverse diode
Single FETs, MOSFETs Applications
- Low-side switching applications
- Power management circuits
- General purpose amplification
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix L6327HTSA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure the component meets required automotive or industrial qualification standards if applicable to the design. Confirm availability status as product lifecycles may change.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a -100 V P-Channel MOSFET with low on-resistance. Consider the thermal resistance characteristics when designing heat dissipation strategies. Verify that the gate drive voltage aligns with the logic-level threshold requirements for optimal performance.
Single FETs, MOSFETs Part Context
The BSP316P belongs to Infineon's SIPMOS small-signal transistor family. These devices are designed for general-purpose switching and amplification tasks. The P-SOT223-4-1 package provides efficient thermal performance for surface-mount applications.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying electrical parameters and pin configurations.
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