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BSP317PE6327 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 250V 430MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP317PE6327
- Description：MOSFET P-CH 250V 430MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 430mA, 10V
- Vgs(th) (Max) @ Id：2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：262 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP317PE6327
Single FETs, MOSFETs Overview
The BSP317PE6327 is a P-Channel SIPMOS small-signal transistor in an SOT-223 package. It features a drain-source breakdown voltage of -250 V and a continuous drain current of -0.43 A at 25°C. The device has a logic-level gate threshold voltage ranging from -1 V to -2 V, with a maximum on-state resistance of 5 Ω at VGS=-4.5V. It supports high dv/dt ratings of 6 kV/µs and operates within a temperature range of -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- P-Channel enhancement mode construction
- Logic level gate drive capability
- High dv/dt rated for fast switching applications
Single FETs, MOSFETs Applications
- Power management circuits
- Motor control systems
- Load switching applications
Single FETs, MOSFETs Procurement Notes
Verify the component against official Infineon datasheets to confirm electrical parameters and physical dimensions. Ensure compatibility with existing PCB footprints and thermal management requirements. Check for any specific handling instructions related to the SOT-223 package and verify that the ordering code matches the required tape and reel specifications.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high voltage isolation and logic-level control. Consider the thermal resistance characteristics when designing heat dissipation strategies. Evaluate the gate charge requirements against the driving circuit capabilities to ensure efficient switching performance.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS family of power transistors, designed for robust performance in various electronic applications. The SOT-223 package provides a compact solution for surface-mount assembly, balancing power handling capabilities with space constraints in modern electronic designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without thorough technical validation.
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