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BSP317PE6327T is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 250V 430MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP317PE6327T
- Description：MOSFET P-CH 250V 430MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：250 V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4Ohm @ 430mA, 10V
- Vgs(th) (Max) @ Id：2V @ 370µA
- Gate Charge (Qg) (Max) @ Vgs：15.1 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：262 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP317PE6327T
Single FETs, MOSFETs Overview
The BSP317PE6327T is a P-Channel SIPMOS small-signal transistor manufactured by Infineon Technologies. It features a -250 V drain-source breakdown voltage and a continuous drain current of -0.43 A at 25°C. The device operates in enhancement mode with logic level compatibility. Key electrical parameters include a maximum on-state resistance of 4 Ω at VGS=-10V and a gate threshold voltage ranging from -1 V to -2 V. It is housed in an SOT-223 package with a power dissipation rating of 1.8 W.
Single FETs, MOSFETs Feature Summary
- High dv/dt rated capability for robust switching performance
- Logic level operation enabling direct drive from standard logic interfaces
- SIPMOS technology providing enhanced ruggedness and reliability
Single FETs, MOSFETs Applications
- High voltage switching applications requiring dv/dt resilience
- Power management circuits utilizing logic-level control
- General purpose amplification and switching tasks within safe operating limits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code Q67042-S4167 corresponds to the tape and reel configuration required for your assembly line. Confirm that the component meets all necessary environmental standards and packaging specifications before finalizing procurement orders to ensure compatibility with manufacturing processes.
Single FETs, MOSFETs Selection Notes
Select this component when high voltage isolation up to 250 V is required alongside logic-level gate drive capabilities. Consider the thermal resistance characteristics and the specific on-state resistance values under your expected operating currents to ensure efficient power handling and minimal heat generation during continuous operation cycles.
Single FETs, MOSFETs Part Context
This part belongs to the BSP317P series of SIPMOS small-signal transistors. It utilizes Infineon's proprietary SIPMOS technology, designed for compact surface-mount applications. The SOT-223 package provides a balance between thermal performance and space efficiency, suitable for dense circuit board layouts.
Single FETs, MOSFETs Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
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