Single FETs, MOSFETs BSP320SL6433HTMA1 product image

BSP320SL6433HTMA1

$0.60
  • Description:MOSFET N-CH 60V 2.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:300bf790bed0 Category: Brand:

  
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BSP320SL6433HTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.9A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP320SL6433HTMA1

  • Description:MOSFET N-CH 60V 2.9A SOT223-4
  • Series:SIPMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:2.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:120mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id:4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-SOT223-4
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP320SL6433HTMA1

BSP320SL6433HTMA1

Single FETs, MOSFETs Overview

The BSP320SL6433HTMA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, housed in a PG-SOT-223 (R-PDSO-G4) surface-mount package. It features a maximum drain-source voltage of 60 V and a continuous drain current of 2.9 A at 25°C. The device has a typical gate charge of 9.7 nC at 10 V and a maximum on-resistance of 120 mΩ at 10 V. It supports a pulsed drain current of 11.6 A and dissipates up to 1.8 W of power. The component is avalanche rated with an energy capability of 60 mJ and operates within a junction temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

  • Avalanche rated for robust operation under inductive load switching conditions
  • Lead-free plating and RoHS compliance for environmental standards
  • Single configuration with built-in diode structure

Single FETs, MOSFETs Applications

  • Low-side switching applications
  • General purpose power control circuits
  • Small signal amplification stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix L6433 corresponds to the required tape and reel quantity of 4000 pieces per reel. Confirm that the non-dry packaging requirements align with your facility's storage and handling protocols before assembly. Ensure the component meets the necessary automotive qualification standards if deployed in vehicle electronics.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with low gate charge is required for efficient switching. The SOT-223 package provides a balance between thermal performance and board space constraints. Consider the 120 mΩ on-resistance for efficiency calculations in low-current applications where 2.9 A continuous rating is sufficient.

Single FETs, MOSFETs Part Context

This part belongs to the BSP320S series of small signal MOSFETs manufactured by Infineon Technologies. The series utilizes OptiMOS technology to deliver high reliability and low losses. The BSP320SL6433HTMA1 variant specifically denotes the packaging and reel configuration within this product family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other BSP320S variants such as BSP320SH6327XTSA1, provided the electrical parameters and package type remain compatible with the existing design constraints.

BSP320SL6433HTMA1BSP320SL6433HTMA1
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