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BSP321PL6327HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 980MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP321PL6327HTSA1
- Description：MOSFET P-CH 100V 980MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：980mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：900mOhm @ 980mA, 10V
- Vgs(th) (Max) @ Id：4V @ 380µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：319 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP321PL6327HTSA1
Single FETs, MOSFETs Overview
The BSP321PL6327HTSA1 is a P-Channel SIPMOS® small-signal transistor in PG-SOT-223 packaging. It features a drain-source breakdown voltage of -100 V and a continuous drain current of -0.98 A at 25 °C case temperature. The maximum on-state resistance is 900 mΩ at VGS=-10 V. It supports avalanche energy ratings, operates within a junction temperature range of -55 °C to 150 °C, and complies with AEC-Q101 automotive standards.
Single FETs, MOSFETs Feature Summary
- Enhancement mode P-Channel architecture
- Avalanche rated for robust operation
- RoHS compliant and halogen-free construction
Single FETs, MOSFETs Applications
- Automotive electronic systems
- Power switching applications
- General-purpose discrete semiconductor circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm package type and reel quantity. Ensure component authenticity through authorized distribution channels. Confirm that the device meets all required environmental and quality certifications for the intended deployment environment before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a -100 V P-Channel MOSFET with defined avalanche capabilities. Evaluate thermal management requirements based on the specified power dissipation limits. Verify that the gate threshold voltage characteristics align with the driving circuit logic levels for reliable switching performance.
Single FETs, MOSFETs Part Context
This part belongs to the BSP321P series of SIPMOS® transistors manufactured by Infineon Technologies. It utilizes the PG-SOT-223 surface-mount package. The product line is designed for general-purpose switching applications requiring high reliability and compliance with automotive industry standards.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon documentation for confirmed substitute part numbers. Do not assume functional equivalence with other P-Channel MOSFETs without verifying pinout, voltage ratings, and thermal characteristics.
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