BSP372NH6327XTSA1

$0.93

Description：MOSFET N-CH 100V 1.8A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:07e6449bf6d4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP372NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.8A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP372NH6327XTSA1

Description：MOSFET N-CH 100V 1.8A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：230mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：1.8V @ 218µA
Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：329 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP372NH6327XTSA1

BSP372NH6327XTSA1

Single FETs, MOSFETs Overview

The BSP372NH6327XTSA1 is an OptiMOS™ small-signal N-channel enhancement mode MOSFET in a PG-SOT223 package. It features a drain-source breakdown voltage of 100 V and a continuous drain current of 1.8 A at 25 °C. The device has a maximum on-state resistance of 230 mΩ at VGS=10 V and 270 mΩ at VGS=4.5 V. It supports a pulsed drain current of 7.2 A, operates within a temperature range of -55 to +150 °C, and dissipates up to 1.8 W. The component is avalanche rated with EAS of 33 mJ and qualified according to AEC-Q101.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient energy stress
Logic level compatible with 4.5 V gate drive requirements
Qualified for automotive applications per AEC-Q101 standards

Single FETs, MOSFETs Applications

Automotive electronic control units
General purpose switching applications
Load switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and halogen-free status. Ensure the procurement channel provides valid traceability for AEC-Q101 qualified components intended for automotive use. Cross-reference the datasheet revision to match design specifications accurately.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage handling and logic-level gate compatibility in a surface-mount format. The SOT-223 package offers suitable thermal performance for moderate power dissipation. Consider the avalanche rating when designing circuits subject to inductive load switching or voltage spikes.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon OptiMOS™ small-signal transistor family. It is designed as a single N-channel enhancement mode device. The BSP372N series focuses on providing reliable switching capabilities with low on-resistance characteristics suitable for various industrial and automotive electronics applications.