BSP373NH6327XTSA1

$0.83

Description：MOSFET N-CH 100V 1.8A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4696eb8c1e9b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSP373NH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 100V 1.8A SOT223-4. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP373NH6327XTSA1

Description：MOSFET N-CH 100V 1.8A SOT223-4
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：240mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id：4V @ 218µA
Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：265 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT223-4
Package / Case：TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP373NH6327XTSA1

BSP373NH6327XTSA1

Single FETs, MOSFETs Overview

The BSP373NH6327XTSA1 is an N-channel enhancement mode MOSFET from Infineon Technologies, utilizing OptiMOS technology. It features a 100 V drain-source breakdown voltage and a continuous drain current of 1.8 A at 25 °C. The device has a maximum on-state resistance of 240 mΩ and a gate threshold voltage ranging from 2.1 V to 4.0 V. It is housed in a PG-SOT223-4 package with a thermal resistance junction-to-ambient of 110 K/W. The component is avalanche rated, qualified under AEC-Q101 standards, and operates within a temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Avalanche rated for robust operation under transient conditions
Qualified according to AEC-Q101 automotive standards
OptiMOS technology providing low on-state resistance

Single FETs, MOSFETs Applications

Automotive electronic systems
General-purpose switching applications
Low-side power switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and halogen-free compliance. Ensure that the required AEC-Q101 qualification aligns with target application standards. Cross-reference the PG-SOT223-4 footprint dimensions during PCB layout to guarantee mechanical compatibility.

Single FETs, MOSFETs Selection Notes

Select this component when an N-channel MOSFET with 100 V rating and 1.8 A continuous current capability is required. The low gate charge and fast switching characteristics make it suitable for high-frequency applications. Consider the thermal resistance values when designing heat dissipation strategies for enclosed environments.

Single FETs, MOSFETs Part Context

This part belongs to the BSP373N series of small-signal transistors manufactured by Infineon Technologies. The series utilizes OptiMOS technology to optimize performance metrics such as on-resistance and switching speed. The BSP373NH6327XTSA1 variant specifically denotes the SOT-223 package configuration and tape-and-reel packaging format.