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BSP52,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN DARL 80V 1A SOT-223. Review the specifications below when checking this part for your BOM.
The BSP52,115 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 100 V and a continuous drain current of 3 A at 25 °C. The device utilizes a low on-state resistance to minimize conduction losses. It is housed in a compact SOT-666 surface-mount package designed for efficient thermal performance. The component operates within a temperature range from -55 °C to +150 °C junction temperature.
Verify the specific suffix against official Nexperia documentation to confirm tape and reel specifications. Confirm RoHS compliance status through the manufacturer's latest declaration. Ensure the ordering part number matches the required package variant. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design files.
Select this component when a 100 V N-channel MOSFET with moderate current handling is required. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Compare the gate charge parameters against the driving circuit capabilities to ensure adequate switching speed without excessive drive current requirements.
This component belongs to Nexperia's standard discrete MOSFET portfolio. It serves as a general-purpose switching element suitable for various consumer and industrial electronics. The SOT-666 package provides a balance between power handling and board space constraints compared to larger through-hole alternatives.
Consult official Nexperia substitution guides for verified equivalents. Verify pinout compatibility and electrical parameter margins before replacing existing designs. Do not assume direct interchangeability with similar part numbers without checking the specific datasheet differences.
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