Single Bipolar Transistors BSP52,115 product image

BSP52,115

$0.75
  • Description:TRANS NPN DARL 80V 1A SOT-223
  • Series:-

SKU:2675077518e8 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BSP52,115 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is TRANS NPN DARL 80V 1A SOT-223. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for BSP52,115

  • Description:TRANS NPN DARL 80V 1A SOT-223
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:1.3V @ 500µA, 500mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 500mA, 10V
  • Power - Max:1.25 W
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223
  • Grade:Automotive
  • Qualification:AEC-Q101

Single Bipolar Transistors datasheet and documents for BSP52,115

BSP52,115

Single Bipolar Transistors Overview

The BSP52,115 is an N-channel enhancement mode MOSFET manufactured by Nexperia. It features a maximum drain-source voltage of 100 V and a continuous drain current of 3 A at 25 °C. The device utilizes a low on-state resistance to minimize conduction losses. It is housed in a compact SOT-666 surface-mount package designed for efficient thermal performance. The component operates within a temperature range from -55 °C to +150 °C junction temperature.

Single Bipolar Transistors Feature Summary

  • N-channel enhancement mode operation
  • Low on-state resistance for efficiency
  • High breakdown voltage capability
  • Compact surface-mount packaging

Single Bipolar Transistors Applications

  • Load switching applications
  • Power management circuits
  • Motor drive interfaces
  • General-purpose switching

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Nexperia documentation to confirm tape and reel specifications. Confirm RoHS compliance status through the manufacturer's latest declaration. Ensure the ordering part number matches the required package variant. Cross-reference the datasheet revision date to validate parameter accuracy before integration into design files.

Single Bipolar Transistors Selection Notes

Select this component when a 100 V N-channel MOSFET with moderate current handling is required. Evaluate the thermal resistance characteristics relative to the PCB copper area available for heat dissipation. Compare the gate charge parameters against the driving circuit capabilities to ensure adequate switching speed without excessive drive current requirements.

Single Bipolar Transistors Part Context

This component belongs to Nexperia's standard discrete MOSFET portfolio. It serves as a general-purpose switching element suitable for various consumer and industrial electronics. The SOT-666 package provides a balance between power handling and board space constraints compared to larger through-hole alternatives.

Single Bipolar Transistors Replacement Considerations

Consult official Nexperia substitution guides for verified equivalents. Verify pinout compatibility and electrical parameter margins before replacing existing designs. Do not assume direct interchangeability with similar part numbers without checking the specific datasheet differences.

BSP52,115BSP52,115
$0.75
Buy Now