BSP88E6327

Single FETs, MOSFETs Overview

The BSP88E6327 is an N-channel depletion mode power MOSFET manufactured by Infineon Technologies. It features a maximum drain-source breakdown voltage of 240 V and a continuous drain current rating of 0.35 A at 25°C. The device exhibits a maximum on-resistance of 6 ohms at zero gate-source voltage. It is housed in a plastic package with four terminals, designed for surface mount installation. The component operates within a temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

• Depletion mode operation providing normally-on characteristics suitable for constant current sources
• Logic level compatible design for simplified interface requirements
• Single configuration with built-in diode structure

Single FETs, MOSFETs Applications

• Constant current source circuits
• High-voltage switching applications
• Power management systems requiring normally-on behavior

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm exact tape-and-reel specifications and lot traceability. Confirm RoHS compliance status through the manufacturer's latest declaration. Ensure the sourcing channel provides valid origin certificates, as this part may be distributed through authorized partners or secondary markets.

Single FETs, MOSFETs Selection Notes

Select this component when a normally-on N-channel MOSFET with high voltage capability is required. The 240V rating suits medium-voltage applications, while the 6-ohm on-resistance defines its conduction losses. Consider the 0.35A current limit for load requirements. Verify thermal management needs given the package type and power dissipation constraints in the intended operating environment.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically within the MOSFET category. It represents a silicon-based power device designed for robust performance in various electronic systems. The designation indicates a specific variant within the broader BSP series, tailored for particular voltage and current specifications.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-reference parameters such as VDS, ID, RDS(on), and package dimensions. Ensure any substitute maintains depletion mode operation if that functionality is critical to the circuit design.