Single FETs, MOSFETs BSP89,115 product image

BSP89,115

$0.64
  • Description:MOSFET N-CH 240V 375MA SOT223
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:88663df0103d Category: Brand:

  
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BSP89,115 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 240V 375MA SOT223. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSP89,115

  • Description:MOSFET N-CH 240V 375MA SOT223
  • Series:-
  • Mfr:Nexperia USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):240 V
  • Current - Continuous Drain (Id) @ 25°C:375mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 340mA, 10V
  • Vgs(th) (Max) @ Id:2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:120 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.5W (Ta)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-223
  • Package / Case:TO-261-4, TO-261AA

Single FETs, MOSFETs datasheet and documents for BSP89,115

BSP89,115

Single FETs, MOSFETs Overview

The BSP89,115 is an N-channel enhancement mode vertical D-MOS transistor manufactured by Nexperia USA Inc. It features a drain-source voltage (VDS) of 240 V and a continuous drain current (ID) of 375 mA. The device operates with a gate-source threshold voltage (VGSth) of 2 V and exhibits a maximum on-state resistance (RDSon) of 5 Ω at 10 V. Total power dissipation reaches 1.5 W at 25 °C ambient temperature. The component utilizes a SOT223 surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Direct interface compatibility with CMOS and TTL logic families
  • High-speed switching capability for efficient signal processing
  • Elimination of secondary breakdown effects during operation

Single FETs, MOSFETs Applications

  • Line current interrupters in telephone sets
  • Relay driver circuits
  • High-speed line transformer drivers

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging configuration required for automated assembly processes. Confirm that the requested part number matches the exact electrical specifications and thermal characteristics defined in the official datasheet before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage isolation and fast switching are required within a compact surface-mount footprint. Ensure the application circuit provides adequate heat sinking to maintain junction temperatures within safe operating limits during continuous conduction periods.

Single FETs, MOSFETs Part Context

This device belongs to the discrete semiconductor category, specifically functioning as a vertical D-MOS transistor. It serves as a robust switching element designed for industrial and consumer electronics applications requiring reliable performance under moderate power conditions.

Single FETs, MOSFETs Replacement Considerations

BSP89L6327HTSA1 is a confirmed substitute part number available from Infineon Technologies.

BSP89,115BSP89,115
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