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BSR315PH6327XTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 60V 620MA SC59. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSR315PH6327XTSA1
- Description：MOSFET P-CH 60V 620MA SC59
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：620mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：800mOhm @ 620mA, 10V
- Vgs(th) (Max) @ Id：2V @ 160µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：176 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SC59-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSR315PH6327XTSA1
Single FETs, MOSFETs Overview
The BSR315PH6327XTSA1 is a P-channel enhancement-mode MOSFET from the Infineon SIPMOS series, housed in a PG-SC59 (SOT-23) surface-mount package. It features a drain-source breakdown voltage of -60 V and a continuous drain current of -0.62 A at 25 °C. The device has a maximum on-state resistance of 800 mΩ at VGS=-10 V and 1300 mΩ at VGS=-4.5 V. It supports an avalanche energy rating of 0.5 mJ and operates within a temperature range of -55 °C to 150 °C.
Single FETs, MOSFETs Feature Summary
- Avalanche rated for robust operation under transient conditions
- Logic level gate drive capability for direct microcontroller interfacing
- Footprint and pinning compatible with standard SOT-23 packages
Single FETs, MOSFETs Applications
- Low-side switching applications
- Load switch circuits
- General-purpose small-signal amplification
Single FETs, MOSFETs Procurement Notes
Verify the component against official Infineon datasheets to confirm exact electrical parameters and package dimensions. Ensure compliance with RoHS and halogen-free requirements as specified by the manufacturer. Confirm that the ordering suffix matches the required tape and reel packaging quantity.
Single FETs, MOSFETs Selection Notes
Select this component when a compact P-channel MOSFET with logic-level compatibility is required. Consider its low thermal resistance and high breakdown voltage for reliable performance in space-constrained designs. Evaluate the specific on-resistance requirements at your operating gate voltage to ensure adequate efficiency.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon SIPMOS family, designed for small-signal applications. It utilizes silicon technology and is qualified according to automotive standards. The SC-59 package provides a compact solution suitable for modern surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
BSR315P
Single FETs, MOSFETs FAQ
What is the maximum continuous drain current?
The maximum continuous drain current is -0.62 A at an ambient temperature of 25 °C.
Is the device suitable for logic-level driving?
Yes, it is a logic-level device with a gate threshold voltage typically between -1 V and -2 V.
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